Microchip MSC750SMA170D/S
Manufacturer No:
MSC750SMA170D/S
Manufacturer:
Microchip
Package:
Description:
1700V, 750 mOhm, Die, MA Family Discrete Silicon Carbide (SiC) MOSFET
Quantity:
In Stock :4019
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
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3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MSC750SMA170D/S Information
Microchip MSC750SMA170D/S technical specifications, attributes, parameters and parts with similar specifications to Microchip MSC750SMA170D/S.
- Type
- Parameter
- Drain Source Voltage Max V (volt)
- 1700
- Gate Drive Voltage (V)
- 20-18
- On-State Resistance (VGS = 20V) mΩ (milliohm)
- 750
- Continuous Drain Current Max (Ampere)
- 7
- Output Capacitance (pF)
- 14
- Junction Temperature (°C)
- -55 - 175
- Package Type
- Die
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip MSC750SMA170D/S.
Other Brochures:
Application Notes:
Sell Sheets:
Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.
The MSC750SMA170D/S is part of our MA Family of mSiC MOSFETs. This 1700V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 750 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 7A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.
The SiC bare die MOSFETs offers system-level customization for highly efficient and compact advanced power electronics solutions. The compact design of the bare die package enables even higher power density, making it ideal for high-power, high-efficiency systems.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
