Microchip MSC2X51SDA120J
Manufacturer No:
MSC2X51SDA120J
Manufacturer:
Microchip
Package:
Description:
1200V, 50A, SOT-227, DA Family, Discrete Dual Silicon Carbide (SiC) Schottky Barrier Diode
Quantity:
In Stock :8874
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MSC2X51SDA120J Information
Microchip MSC2X51SDA120J technical specifications, attributes, parameters and parts with similar specifications to Microchip MSC2X51SDA120J.
- Type
- Parameter
- Reverse Voltage [max] Max
- 1200
- Forward Current (A) [max]
- 50
- Forward Voltage [typ]
- 1.5
- Reverse Leakage Current [typ] µA (microampere)
- 15
- Total Capacitive Charge (Qc) V (volt)
- 224
- Dual Diode
- Yes
- Configuration
- Parallel
- Junction Temperature (°C)
- -55 - 175
- Package Type
- SOT-227
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip MSC2X51SDA120J.
Application Notes:
Other Brochures:
Data Sheets:
Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.
This 1200V mSiC diode offers significant advantages in diverse applications with a forward current rating of up to 50A ensures robust performance in high-power applications. The reverse leakage current is minimized to 15 µA, providing excellent efficiency and reliability. This dual SiC diode in a parallel configuration ensures enhanced current handling and improved thermal performance for demanding power systems. mSiC diodes in a SOT-227 package are designed for high-power applications requiring exceptional thermal performance and reliability.
The SOT-227 package features a robust, isolated baseplate that ensures excellent heat dissipation. With the inherent advantages of SiC technology, the SOT-227 package supports higher current ratings and superior thermal cycling capabilities. Its modular design allows for easy parallel configurations and integration into high-power systems, providing a durable, efficient, and scalable solution for advanced energy applications.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
