Microchip MSC2X100SDA070J
Manufacturer No:
MSC2X100SDA070J
Manufacturer:
Microchip
Package:
Description:
700V, 100A, SOT-227, DA Family, Discrete Dual Silicon Carbide (SiC) Schottky Barrier Diode
Quantity:
In Stock :3074
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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SHIPPING COST
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MSC2X100SDA070J Information
Microchip MSC2X100SDA070J technical specifications, attributes, parameters and parts with similar specifications to Microchip MSC2X100SDA070J.
- Type
- Parameter
- Reverse Voltage [max] Max
- 700
- Forward Current (A) [max]
- 100
- Forward Voltage [typ]
- 1.5
- Reverse Leakage Current [typ] µA (microampere)
- 30
- Total Capacitive Charge (Qc) V (volt)
- 266
- Dual Diode
- Yes
- Configuration
- Anti-Parallel
- Junction Temperature (°C)
- -55 - 175
- Package Type
- SOT-227
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip MSC2X100SDA070J.
Other Brochures:
Data Sheets:
Application Notes:
Our mSiC Diodes are engineered to deliver superior performance and efficiency. Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer a lower forward voltage drop, higher switching speeds and reduced power losses. This enables improved efficiency, reduced thermal requirements and enhanced reliability.
This 700V SiC SBDs offer significant advantages in diverse applications with a forward current rating of up to 100A ensures robust performance in high-power applications. The reverse leakage current is minimized to 30 µA, providing excellent efficiency and reliability. This dual diode features an anti-parallel configuration, providing efficient reverse recovery performance and high-speed switching capabilities for your power electronics applications. mSiC diodes in a SOT-227 package are designed for high-power applications requiring exceptional thermal performance and reliability.
The SOT-227 package features a robust, isolated baseplate that ensures excellent heat dissipation. With the inherent advantages of SiC technology, the SOT-227 package supports higher current ratings and superior thermal cycling capabilities. Its modular design allows for easy parallel configurations and integration into high-power systems, providing a durable, efficient, and scalable solution for advanced energy applications.
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