Microchip MSC180SMA120SA
Manufacturer No:
MSC180SMA120SA
Manufacturer:
Microchip
Package:
Description:
1200V, 180 mOhm, TO-263-7 (D2PAK-7L), MA Family Discrete Silicon Carbide (SiC) MOSFET
Quantity:
In Stock :6703
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MSC180SMA120SA Information
Microchip MSC180SMA120SA technical specifications, attributes, parameters and parts with similar specifications to Microchip MSC180SMA120SA.
- Type
- Parameter
- Package
- D2PAK-7
- Drain to Source Voltage
- 1.2kV
- Current - Continuous Drain(Id)
- 21A
- Pd - Power Dissipation
- 147W
- RDS(on)
- 225mΩ@20V
- Gate Threshold Voltage (Vgs(th))
- 5V@500uA
- Type
- N-Channel
- Reverse Transfer Capacitance (Crss@Vds)
- 4pF
- Input Capacitance(Ciss)
- 481pF
- Operating Junction Temperature Range
- -55℃~+175℃
- Type
- Parameter
- Output Capacitance(Coss)
- 47pF
- Gate Charge(Qg)
- 36nC@20V
- CNHTS
- 8541290000
- USHTS
- 8541290095
- TARIC
- 8541290000
- CAHTS
- 8541290000
- BRHTS
- 85412910
- INHTS
- 85412900
- MXHTS
- 8541.29.99
Download datasheets and manufacturer documentation for Microchip MSC180SMA120SA.
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Data Sheets:
Application Notes:
Sell Sheets:
Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.
The MSC180SMA120SA is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 180 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 21A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.
The TO-263-7 package, also known as D2PAK-7L, features a compact, surface-mount design with seven leads, providing enhanced electrical connectivity and superior thermal management. The D2PAK-7L package's low-profile design allows for efficient heat dissipation and easy integration into densely packed power systems.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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