Microchip MSC080SMA120SDT/RM
Manufacturer No:
MSC080SMA120SDT/RM
Manufacturer:
Microchip
Package:
Description:
1200V, 80 mOhm, TO-263-7 XL (D2PAK-7L XL), MA Family Discrete Silicon Carbide (SiC) MOSFET
Quantity:
In Stock :8922
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Shipped from：HK Warehouse
Expected Shipping：Sun, May 31 - Mon, Jun 1, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MSC080SMA120SDT/RM Information
Microchip MSC080SMA120SDT/RM technical specifications, attributes, parameters and parts with similar specifications to Microchip MSC080SMA120SDT/RM.
- Type
- Parameter
- Drain Source Voltage Max V (volt)
- 1200
- Gate Drive Voltage (V)
- 20-18
- On-State Resistance (VGS = 18V) mΩ (milliohm)
- 90
- On-State Resistance (VGS = 20V) mΩ (milliohm)
- 80
- Continuous Drain Current Max (Ampere)
- 43
- Output Capacitance (pF)
- 92
- Junction Temperature (°C)
- -55 - 175
- Package Type
- TO-263-7 XL
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip MSC080SMA120SDT/RM.
Other Brochures:
Data Sheets:
Application Notes:
Sell Sheets:
Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.
The MSC080SMA120SDT/R is part of our MA Family of mSiC MOSFETs. This 1200V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 80 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 43A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.
The TO-263-7 XL package, also known as D2PAK-7L XL, features an extended lead design that enhances electrical connectivity and thermal performance. These SiC MOSFETs deliver superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs. The extended lead design of the D2PAK-7L XL package allows for improved heat dissipation and easier integration into power systems.
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12.28 M
Listed Part Number
3,000+
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In-stock SKU
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