Microchip MSC035SMA070B4NVAO
Manufacturer No:
MSC035SMA070B4NVAO
Manufacturer:
Microchip
Package:
Description:
700V, 35 mOhm, TO-247-4 Notch, MA Family Discrete Silicon Carbide (SiC) MOSFET
Quantity:
In Stock :6547
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Shipped from：HK Warehouse
Expected Shipping：Tue, Jun 2 - Wed, Jun 3, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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PURCHASE
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SHIPPING COST
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MSC035SMA070B4NVAO Information
Microchip MSC035SMA070B4NVAO technical specifications, attributes, parameters and parts with similar specifications to Microchip MSC035SMA070B4NVAO.
- Type
- Parameter
- Drain Source Voltage Max V (volt)
- 700
- Gate Drive Voltage (V)
- 20-18
- On-State Resistance (VGS = 18V) mΩ (milliohm)
- 40
- On-State Resistance (VGS = 20V) mΩ (milliohm)
- 35
- Continuous Drain Current Max (Ampere)
- 75
- Output Capacitance (pF)
- 220
- Junction Temperature (°C)
- -55 - 175
- Package Type
- TO-247-4 Notch
- Type
- Parameter
Download datasheets and manufacturer documentation for Microchip MSC035SMA070B4NVAO.
Sell Sheets:
Other Brochures:
Data Sheets:
Our mSiC MOSFETs enable high-efficiency and robust performance in demanding, high-voltage applications. Leveraging over 20 years of silicon carbide (SiC) experience, these SiC MOSFETs are designed to maximize system efficiency while significantly reducing system weight and size.
The MSC035SMA070B4N is part of our MA Family of mSiC MOSFETs. This 700V SiC MOSFET uses a gate drive voltage of 18-20V to ensure reliable switching performance with a low RDS(on) of 35 mOhms, minimizing conduction losses and enhancing overall system efficiency. This device is suitable for high-power applications, capable of handling continuous drain currents of 75A. With maximum ratings reaching up to 175°C, SiC MOSFETs can operate at elevated junction temperatures to provide superior thermal performance and reliability in harsh environments.
TO-247-4 packages are engineered to deliver exceptional power efficiency and thermal management in high-performance applications. The TO-247-4 package features an innovative four-lead design, which includes a Kelvin source connection that significantly reduces gate ringing and switching losses. These SiC MOSFETs provide superior switching performance, reduced conduction losses, and higher thermal conductivity compared to traditional silicon-based MOSFETs.
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12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
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