ONSEMI MSB710-RT1

Manufacturer No:

MSB710-RT1

Manufacturer:

ONSEMI

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

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MSB710-RT1 information

ONSEMI MSB710-RT1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MSB710-RT1.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2006

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

HTS Code
8541.21.00.75

Subcategory
Other Transistors

Voltage - Rated DC
-50V

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
240

Reach Compliance Code
not_compliant

Current Rating
-500mA

Time@Peak Reflow Temperature-Max (s)
30

Pin Count
3

JESD-30 Code
R-PDSO-G3

Number of Elements
1

Configuration
SINGLE

Power - Max
200mW

Transistor Application
AMPLIFIER

Polarity/Channel Type
PNP

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 150mA 10V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
600mV @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max)
50V

Current - Collector (Ic) (Max)
500mA

Transition Frequency
200MHz

Power Dissipation-Max (Abs)
0.2W

RoHS Status
RoHS Compliant

Lead Free
Contains Lead

Download datasheets and manufacturer documentation for ONSEMI MSB710-RT1.

MSB710-RT1 Overview

In this device, the DC current gain is 120 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 30mA, 300mA.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).200MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 50V.

MSB710-RT1 Features

the DC current gain for this device is 120 @ 150mA 10V
the vce saturation(Max) is 600mV @ 30mA, 300mA
the current rating of this device is -500mA
a transition frequency of 200MHz

MSB710-RT1 Applications

There are a lot of ON Semiconductor
MSB710-RT1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.