ONSEMI MPSW63G
ONSEMI MPSW63G

ONSEMI MPSW63G

Manufacturer No:

MPSW63G

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 Long Body

Description:

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 Long Body Bulk Through Hole

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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MPSW63G information

ONSEMI MPSW63G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPSW63G.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 Long Body
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Bulk
  • Published
  • 2006
  • JESD-609 Code
  • e1
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Terminal Finish
  • Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -30V
  • Max Power Dissipation
  • 1W
  • Terminal Position
  • BOTTOM
  • Peak Reflow Temperature (Cel)
  • 260
  • Current Rating
  • -500mA
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • MPSW63
  • Pin Count
  • 3
  • Qualification Status
  • Not Qualified
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power Dissipation
  • 1W
  • Transistor Type
  • PNP - Darlington
  • Collector Emitter Voltage (VCEO)
  • 30V
  • Max Collector Current
  • 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 10000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 1.5V @ 100?A, 100mA
  • Collector Emitter Breakdown Voltage
  • 30V
  • Transition Frequency
  • 125MHz
  • Collector Emitter Saturation Voltage
  • 1.5V
  • Frequency - Transition
  • 125MHz
  • Collector Base Voltage (VCBO)
  • 30V
  • Emitter Base Voltage (VEBO)
  • 10V
  • Continuous Collector Current
  • -500mA
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for ONSEMI MPSW63G.

Datasheets:

PCN Obsolescence/ EOL:

ReachStatement:

MPSW63G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100?A, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 125MHz.A maximum collector current of 500mA volts can be achieved.

MPSW63G Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100?A, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSW63G Applications


There are a lot of ON Semiconductor
MPSW63G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

Step6：Packaging Box

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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