

ONSEMI MPSA92_D81Z
Manufacturer No:
MPSA92_D81Z
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 250nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
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MPSA92_D81Z information
ONSEMI MPSA92_D81Z technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPSA92_D81Z.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Power Dissipation
- 625mW
- Frequency
- 50MHz
- Base Part Number
- MPSA92
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 625mW
- Gain Bandwidth Product
- 50MHz
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 300V
- Max Collector Current
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 25 @ 30mA 10V
- Current - Collector Cutoff (Max)
- 250nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage
- 300V
- Collector Emitter Saturation Voltage
- 500mV
- Collector Base Voltage (VCBO)
- 300V
- hFE Min
- 40
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for ONSEMI MPSA92_D81Z.
Datasheets:
ReachStatement:
MPSA92_D81Z Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA92_D81Z Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
MPSA92_D81Z Applications
There are a lot of ON Semiconductor
MPSA92_D81Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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