ONSEMI MPS751ZL1
ONSEMI MPS751ZL1

ONSEMI MPS751ZL1

Manufacturer No:

MPS751ZL1

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

MPS751ZL1 Information

ONSEMI MPS751ZL1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS751ZL1.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Box (TB)
  • Published
  • 2004
  • JESD-609 Code
  • e0
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Type
  • Parameter
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Lead (Sn/Pb)
  • Additional Feature
  • EUROPEAN PART NUMBER
  • HTS Code
  • 8541.21.00.95
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -60V
  • Max Power Dissipation
  • 625mW
  • Terminal Position
  • BOTTOM
  • Peak Reflow Temperature (Cel)
  • 240

Download datasheets and manufacturer documentation for ONSEMI MPS751ZL1.

MPS751ZL1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 75MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

MPS751ZL1 Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz


MPS751ZL1 Applications


There are a lot of ON Semiconductor
MPS751ZL1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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Expected Shipping:Fri, Mar 13 - Sat, Mar 14, 2026
Date Code:Within 2 Years

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