ONSEMI MPS751ZL1

Manufacturer No:

MPS751ZL1

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

Quantity:

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MPS751ZL1 information

ONSEMI MPS751ZL1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS751ZL1.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Box (TB)

Published
2004

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

Additional Feature
EUROPEAN PART NUMBER

HTS Code
8541.21.00.95

Subcategory
Other Transistors

Voltage - Rated DC
-60V

Max Power Dissipation
625mW

Terminal Position
BOTTOM

Peak Reflow Temperature (Cel)
240

Reach Compliance Code
not_compliant

Current Rating
-2A

Time@Peak Reflow Temperature-Max (s)
30

Base Part Number
MPS751

JESD-30 Code
O-PBCY-T3

Qualification Status
Not Qualified

Number of Elements
1

Element Configuration
Single

Transistor Application
AMPLIFIER

Gain Bandwidth Product
75MHz

Polarity/Channel Type
PNP

Transistor Type
PNP

Collector Emitter Voltage (VCEO)
500mV

Max Collector Current
2A

DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 1A 2V

Current - Collector Cutoff (Max)
100nA

Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A

Collector Emitter Breakdown Voltage
60V

Current - Collector (Ic) (Max)
2A

Transition Frequency
75MHz

Collector Emitter Saturation Voltage
500mV

Collector Base Voltage (VCBO)
80V

Emitter Base Voltage (VEBO)
5V

hFE Min
75

RoHS Status
RoHS Compliant

Lead Free
Contains Lead

Download datasheets and manufacturer documentation for ONSEMI MPS751ZL1.

MPS751ZL1 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 75MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

MPS751ZL1 Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz

MPS751ZL1 Applications

There are a lot of ON Semiconductor
MPS751ZL1 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.