

ONSEMI MPS751ZL1
Manufacturer No:
MPS751ZL1
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Quantity:
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MPS751ZL1 Information
ONSEMI MPS751ZL1 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS751ZL1.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Box (TB)
- Published
- 2004
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- EUROPEAN PART NUMBER
- HTS Code
- 8541.21.00.95
- Subcategory
- Other Transistors
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 625mW
- Terminal Position
- BOTTOM
- Peak Reflow Temperature (Cel)
- 240
Download datasheets and manufacturer documentation for ONSEMI MPS751ZL1.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
MPS751ZL1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 75 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 75MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
MPS751ZL1 Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751ZL1 Applications
There are a lot of ON Semiconductor
MPS751ZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
MPS751ZL1 Relevant information
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