ONSEMI MPS751RLRAG
ONSEMI MPS751RLRAG

ONSEMI MPS751RLRAG

Manufacturer No:

MPS751RLRAG

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Description:

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

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Expected Shipping:Thu, May 7 - Fri, May 8, 2026
Date Code:Within 2 Years

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MPS751RLRAG Information

ONSEMI MPS751RLRAG technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS751RLRAG.

  • Type
  • Parameter
  • Contact Plating
  • Copper, Silver, Tin
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Surface Mount
  • NO
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2007
  • JESD-609 Code
  • e1
  • Type
  • Parameter
  • Pbfree Code
  • yes
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Termination
  • Through Hole
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
  • Other Transistors
  • Voltage - Rated DC
  • -60V
  • Max Power Dissipation
  • 625mW

MPS751RLRAG Overview


This device has a DC current gain of 75 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.

MPS751RLRAG Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz


MPS751RLRAG Applications


There are a lot of ON Semiconductor
MPS751RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting