ONSEMI MPS751

Manufacturer No:

MPS751

Manufacturer:

ONSEMI

Package:

TO-226-3, TO-92-3 (TO-226AA)

Description:

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

Quantity:

In Stock :5861

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

MPS751 Information

ONSEMI MPS751 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MPS751.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)

Factory Lead Time
6 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-226-3, TO-92-3 (TO-226AA)

Number of Pins
3

Weight
201mg

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Bulk

Type
Parameter

Published
2002

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

Subcategory
Other Transistors

Voltage - Rated DC
-60V

Download datasheets and manufacturer documentation for ONSEMI MPS751.

MPS751 Overview

In this device, the DC current gain is 75 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.

MPS751 Features

the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz