ROHM MMST8098T146

Manufacturer No:

MMST8098T146

Manufacturer:

ROHM

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Quantity:

Delivery:

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In Stock :Available

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MMST8098T146 information

ROHM MMST8098T146 technical specifications, attributes, parameters and parts with similar specifications to ROHM MMST8098T146.

Type
Parameter

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Packaging
Tape & Reel (TR)

Published
2005

Part Status
Not For New Designs

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Max Power Dissipation
350mW

Base Part Number
MMST8098

Element Configuration
Single

Gain Bandwidth Product
350MHz

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
60V

Max Collector Current
200mA

DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V

Current - Collector Cutoff (Max)
100nA

Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA

Collector Emitter Breakdown Voltage
60V

Collector Emitter Saturation Voltage
400mV

Max Breakdown Voltage
60V

Collector Base Voltage (VCBO)
60V

hFE Min
75

Continuous Collector Current
200mA

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for ROHM MMST8098T146.

Datasheets:

rohm-mmst8098t146-datasheets-3274.pdf

MMST8098T146 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

MMST8098T146 Features

the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V

MMST8098T146 Applications

There are a lot of ROHM Semiconductor
MMST8098T146 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.