ROHM MMST8098T146
Manufacturer No:
MMST8098T146
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN 100nA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:
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MMST8098T146 Information
ROHM MMST8098T146 technical specifications, attributes, parameters and parts with similar specifications to ROHM MMST8098T146.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Packaging
- Tape & Reel (TR)
- Published
- 2005
- Part Status
- Not For New Designs
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -55°C
- Type
- Parameter
- Max Power Dissipation
- 350mW
- Base Part Number
- MMST8098
- Element Configuration
- Single
- Gain Bandwidth Product
- 350MHz
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 60V
- Max Collector Current
- 200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 1mA 5V
- Current - Collector Cutoff (Max)
- 100nA
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 10mA, 100mA
Download datasheets and manufacturer documentation for ROHM MMST8098T146.
Datasheets:
MMST8098T146 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MMST8098T146 Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 6V
MMST8098T146 Applications
There are a lot of ROHM Semiconductor
MMST8098T146 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
MMST8098T146 Relevant information
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