ONSEMI MMDF2C03HDR2G
Manufacturer No:
MMDF2C03HDR2G
Manufacturer:
ONSEMI
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
Power MOSFET 30V 4.1 A 70 mOhm Dual Complementary SO-8
Quantity:
In Stock :4122
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MMDF2C03HDR2G Information
ONSEMI MMDF2C03HDR2G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MMDF2C03HDR2G.
- Type
- Parameter
- Package Type
- SOIC-8
- Container Qty.
- 2500
- Channel Polarity
- Complementary
- MSL Type
- 1
- VGS Max (V)
- 20
- RDS(on) Max @ VGS = 2.5 V (mΩ)
- NA
- Case Outline
- 751-07
- Package Name
- NA
- Qg Typ @ VGS = 10 V (nC)
- -
- Qrr Typ (nC)
- -
- Type
- Parameter
- Crss Typ (pF)
- -
- MSL Temp (°C)
- 260
- Wide SOA Mosfets
- 0
- Vgs(th) Max (V)
- -
- Qgd Typ @ VGS = 4.5 V (nC)
- -
- Container Type
- REEL
- OPN in older Technology
- 0
- RDS(on) Max @ VGS = 4.5 V (mΩ)
- -
- Qg Typ @ VGS = 4.5 V (nC)
- -
- Type
- Small Signal
Download datasheets and manufacturer documentation for ONSEMI MMDF2C03HDR2G.
Datasheet:
Package Drawing:
Medium Power Surface Mount Products. These devices are an advanced series of power MOSFETs which utilize a High Cell Density process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for N-Channel low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Feature
- Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
- Logic Level Gate Drive Can Be Driven by Logic ICs P-Channel
- Miniature SO-8 Surface Mount Package Saves Board Space
- Diode Is Characterized for Use In Bridge Circuits
- Diode Exhibits High Speed, With Soft Recovery
- IDSS Specified at Elevated Temperature
- Avalanche Energy Specified
- Mounting Information for SO-8 Package Provided
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
