MMBV3102LT1G
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ONSEMI MMBV3102LT1G

Manufacturer No:

MMBV3102LT1G

Manufacturer:

ONSEMI

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MMBV3102 Single Surface Mount 25pF @ 3V 1MHz 125°C TJ Capacitance Ratio-4.8 3 Terminations SILICON DUAL TO-236-3, SC-59, SOT-23-3

Delivery:

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Payment:

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In Stock :Available

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MMBV3102LT1G information

ONSEMI MMBV3102LT1G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MMBV3102LT1G.

TypeParameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Operating Temperature
125°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH Q, HIGH RELIABILITY
HTS Code
8541.10.00.80
Capacitance
20pF
Subcategory
Varactors
Voltage - Rated DC
30V
Terminal Position
DUAL
Terminal Form
GULL WING
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MMBV3102
Pin Count
3
Number of Elements
1
Polarity
Standard
Diode Type
Single
Power Dissipation
225mW
Forward Current
200mA
Halogen Free
Halogen Free
Q Factor
200
Max Repetitive Reverse Voltage (Vrrm)
30V
Capacitance @ Vr, F
25pF @ 3V 1MHz
Reverse Voltage (DC)
30V
Frequency Band
VERY HIGH FREQUENCY
Diode Capacitance-Nom
22pF
Min Breakdown Voltage
30V
Capacitance Ratio
4.8
Capacitance Ratio Condition
C3/C25
Diode Cap Tolerance
11.1%
Quality Factor-Min
200
Q @ Vr, F
200 @ 3V, 50MHz
Height
1.01mm
Length
3.04mm

User Guide

PURCHASE

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