DIODES MMBTA05-7-F

Manufacturer No:

MMBTA05-7-F

Manufacturer:

DIODES

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Quantity:

In Stock :6285

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Shipped from：HK Warehouse

Expected Shipping：Thu, May 7 - Fri, May 8, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

MMBTA05-7-F Information

DIODES MMBTA05-7-F technical specifications, attributes, parameters and parts with similar specifications to DIODES MMBTA05-7-F.

Type
Parameter

Factory Lead Time
15 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Weight
7.994566mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
Automotive, AEC-Q101

Type
Parameter

Published
2017

JESD-609 Code
e3

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn)

Additional Feature
HIGH RELIABILITY

Subcategory
Other Transistors

Download datasheets and manufacturer documentation for DIODES MMBTA05-7-F.

MMBTA05-7-F Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 4V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MMBTA05-7-F Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 100MHz