ONSEMI MMBT6517LT3
Manufacturer No:
MMBT6517LT3
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:
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MMBT6517LT3 Information
ONSEMI MMBT6517LT3 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MMBT6517LT3.
- Type
- Parameter
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2001
- JESD-609 Code
- e0
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Type
- Parameter
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- HTS Code
- 8541.21.00.95
- Subcategory
- Other Transistors
- Voltage - Rated DC
- 350V
- Max Power Dissipation
- 225mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 240
Download datasheets and manufacturer documentation for ONSEMI MMBT6517LT3.
Datasheets:
PCN Obsolescence/ EOL:
ReachStatement:
MMBT6517LT3 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 40MHz.During maximum operation, collector current can be as low as 100mA volts.
MMBT6517LT3 Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT3 Applications
There are a lot of ON Semiconductor
MMBT6517LT3 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
MMBT6517LT3 Relevant information
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