Comchip Technology MMBT5401-G
Comchip Technology MMBT5401-G

Comchip Technology MMBT5401-G

Manufacturer No:

MMBT5401-G

Manufacturer:

Comchip Technology

Package:

TO-236-3, SC-59, SOT-23-3

Description:

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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MMBT5401-G information

Comchip Technology MMBT5401-G technical specifications, attributes, parameters and parts with similar specifications to Comchip Technology MMBT5401-G.

  • Type
  • Parameter
  • Factory Lead Time
  • 10 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Weight
  • 200.998119mg
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2011
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Subcategory
  • Other Transistors
  • Max Power Dissipation
  • 300mW
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
  • NOT SPECIFIED
  • JESD-30 Code
  • R-PDSO-G3
  • Number of Elements
  • 1
  • Element Configuration
  • Single
  • Power - Max
  • 300mW
  • Transistor Application
  • SWITCHING
  • Polarity/Channel Type
  • PNP
  • Collector Emitter Voltage (VCEO)
  • 500mV
  • Max Collector Current
  • 600mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 100 @ 10mA 5V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 500mV @ 5mA, 50mA
  • Collector Emitter Breakdown Voltage
  • 150V
  • Transition Frequency
  • 100MHz
  • Frequency - Transition
  • 100MHz
  • Emitter Base Voltage (VEBO)
  • -5V
  • hFE Min
  • 80
  • Continuous Collector Current
  • -600mA
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Comchip Technology MMBT5401-G.

Datasheets:

MMBT5401-G Overview


This device has a DC current gain of 100 @ 10mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -600mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 600mA volts is possible.

MMBT5401-G Features


the DC current gain for this device is 100 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz


MMBT5401-G Applications


There are a lot of Comchip Technology
MMBT5401-G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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