Microchip MIC5011YM
Microchip MIC5011YM

Microchip MIC5011YM

Manufacturer No:

MIC5011YM

Manufacturer:

Microchip

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

High Side or Low Side MOSFET Gate Driver

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MIC5011YM Information

Microchip MIC5011YM technical specifications, attributes, parameters and parts with similar specifications to Microchip MIC5011YM.

  • Type
  • Parameter
  • MOSFET Driver Type
  • High Side
  • Configuration
  • Non-Inverting
  • Maximum Supply Voltage (V)
  • 32
  • Peak Source Output (A)
  • 0.950
  • Peak Sink Output (A)
  • 0.950
  • Source Resistance (Ω)
  • 0
  • Sink Resistance (Ω)
  • 0
  • Propagation Delay t<sub>D1</sub> (ns)
  • 0
  • Propagation Delay t<sub>D2</sub> (ns)
  • 0
  • Rise Time (t<sub>R</sub>, ns)
  • 25,000
  • Type
  • Parameter
  • Fall Time (t<sub>F</sub>, ns)
  • 4,000
  • Capacitive Load Drive
  • 1000 pF in 60 µs

Download datasheets and manufacturer documentation for Microchip MIC5011YM.

Application Notes:

Data Sheets:

The MIC5011 is the "minimum parts count" member of the MIC501X gate driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin MIC5011 is extremely easy to use, requiring only a power FET and nominal supply decoupling to implement either a high- or low-side switch.

The MIC5011 charges a 1 nF load in 60 µs typical with no external components. Faster switching is achieved by adding two 1 nF charge pump capacitors. Operation down to 4.75 V allows the MIC5011 to drive standard MOSFETs in 5 V low-side applications by boosting the gate voltage above the logic supply. In addition, multiple paralleled MOSFETs can be driven by a single MIC5011 for ultra-high current applications.

Other members of the driver family include the MIC5013 protected 8-pin driver.


For new designs, recommends the pin-compatible MIC5014 MOSFET gate driver.



  • 4.75 V to 32 V operation
  • Less than 1 µA current in the "off" state
  • Internal charge pump to drive the gate of an N-channel power FET above supply
  • Available in small outline SOIC packages
  • Internal zener clamp for gate protection
  • Minimum external parts count
  • Can be used to boost drive to low-side power MOSFETs operating on logic supplies
  • 25 µs typical turn-on time with optional external capacitors
  • Implements high- or low-side drivers

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