Microchip MIC4451YM-TR
Microchip MIC4451YM-TRMicrochip MIC4451YM-TRMicrochip MIC4451YM-TR

Microchip MIC4451YM-TR

Manufacturer No:

MIC4451YM-TR

Manufacturer:

Microchip

Package:

8-SOIC (0.154, 3.90mm Width)

Description:

12 A MOSFET Gate Driver

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MIC4451YM-TR Information

Microchip MIC4451YM-TR technical specifications, attributes, parameters and parts with similar specifications to Microchip MIC4451YM-TR.

  • Type
  • Parameter
  • MOSFET Driver Type
  • Low Side
  • Configuration
  • Inverting
  • Maximum Supply Voltage (V)
  • 18
  • Peak Source Output (A)
  • 12
  • Peak Sink Output (A)
  • 12
  • Source Resistance (Ω)
  • 0.8
  • Sink Resistance (Ω)
  • 0.6
  • Propagation Delay t<sub>D1</sub> (ns)
  • 25
  • Propagation Delay t<sub>D2</sub> (ns)
  • 40
  • Rise Time (t<sub>R</sub>, ns)
  • 20
  • Type
  • Parameter
  • Fall Time (t<sub>F</sub>, ns)
  • 24
  • Capacitive Load Drive
  • 10,000 pF in 24 ns

Download datasheets and manufacturer documentation for Microchip MIC4451YM-TR.

MIC4451 and MIC4452 CMOS MOSFET gate drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver. Both versions are capable of 12 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4451/4452 accepts any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4451/4452 gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.



  • BiCMOS/DMOS construction
  • Latch-up proof: fully isolated process is inherently immune to any latch-up.
  • Input will withstand negative swing of up to 5 V
  • Matched rise and fall times 25 ns
  • Wide operating range 4.5 V to 18 V
  • High capacitive load drive 62,000 pF
  • Low delay time 30 ns (typical)
  • Logic high input for any voltage from 2.4 V to VS
  • Low equivalent input capacitance 7 pF (typical)
  • Low supply current 450 µA with logic 1 input
  • Low output impedance 1.0 Ω
  • Output voltage swings within 25 mV of ground or VS.
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