Microchip MIC4421ZT
Microchip MIC4421ZTMicrochip MIC4421ZTMicrochip MIC4421ZT

Microchip MIC4421ZT

Manufacturer No:

MIC4421ZT

Manufacturer:

Microchip

Package:

TO-220-5

Description:

9 A MOSFET Gate Driver

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

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Step5:Anti-collision Filling

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Step6:Packaging Box

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

MIC4421ZT Information

Microchip MIC4421ZT technical specifications, attributes, parameters and parts with similar specifications to Microchip MIC4421ZT.

  • Type
  • Parameter
  • MOSFET Driver Type
  • Low Side
  • Configuration
  • Inverting
  • Maximum Supply Voltage (V)
  • 18
  • Peak Source Output (A)
  • 9
  • Peak Sink Output (A)
  • 9
  • Source Resistance (Ω)
  • 0.8
  • Sink Resistance (Ω)
  • 0.6
  • Propagation Delay t<sub>D1</sub> (ns)
  • 15
  • Propagation Delay t<sub>D2</sub> (ns)
  • 35
  • Rise Time (t<sub>R</sub>, ns)
  • 20
  • Type
  • Parameter
  • Fall Time (t<sub>F</sub>, ns)
  • 24
  • Capacitive Load Drive
  • 10,000 pF in 24 ns

Download datasheets and manufacturer documentation for Microchip MIC4421ZT.

MIC4421 and MIC4422 MOSFET gate drivers are rugged, efficient, and easy to use. The MIC4421 is an inverting driver, while the MIC4422 is a non-inverting driver.


Both versions are capable of 9 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4421/4422 accepts any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as -5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge.


MIC4421/4422 gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost.


Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS insures adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.



  • High peak-output current: 9 A peak (typical)
  • Wide operating range: 4.5 V to 18 V (typical)
  • Minimum pulse width: 50 ns
  • Latch-up proof: fully isolated process is inherently immune to any latch-up.
  • Input will withstand negative swing of up to 5 V
  • High capacitive load drive: 47,000 pF
  • Low delay time: 15 ns (typical)
  • Logic high input for any voltage from 2.4 V to VS
  • Low equivalent input capacitance (typical): 7 pF
  • Low supply current: 500 µA (typical)
  • Output voltage swing to within 25 mV of ground or VS
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