Microchip MCP14A0302T-E/KBA
Microchip MCP14A0302T-E/KBAMicrochip MCP14A0302T-E/KBAMicrochip MCP14A0302T-E/KBA

Microchip MCP14A0302T-E/KBA

Manufacturer No:

MCP14A0302T-E/KBA

Manufacturer:

Microchip

Package:

8-WFDFN Exposed Pad

Description:

3 A MOSFET Gate Driver with Low Threshold Input and Enable

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MCP14A0302T-E/KBA Information

Microchip MCP14A0302T-E/KBA technical specifications, attributes, parameters and parts with similar specifications to Microchip MCP14A0302T-E/KBA.

  • Type
  • Parameter
  • Capacitive Load Drive
  • 1000 pF in 13.0 ns
  • MOSFET Driver Type
  • Low Side
  • Maximum Supply Voltage V (volt)
  • 18
  • Peak Sink Current A (ampere)
  • 3
  • Peak Source Current A (ampere)
  • 3
  • Propagation Delay tD1 ns (nanosecond)
  • 15
  • Propagation Delay tD2 ns (nanosecond)
  • 18
  • Sink Resistance Ω (ohm)
  • 1.5
  • Source Resistance Ω (ohm)
  • 2.2
  • Fall Time tF ns (nanosecond)
  • 12
  • Type
  • Parameter
  • Rise Time tR ns (nanosecond)
  • 13

Download datasheets and manufacturer documentation for Microchip MCP14A0302T-E/KBA.

The MCP14A0301/2 devices are high-speed MOSFET drivers that are capable of providing up to 3 A of peak current while operating from a single 4.5 V to 18 V supply. The inverting (MCP14A0301) or non-inverting (MCP14A0302) single channel output is directly controlled from either TTL or CMOS (2 V to 18 V) logic. These devices also feature low shoot-through current, matched rise and fall times, and short propagation delays which make them ideal for high switching frequency applications.

The MCP14A0301/2 family of devices offer enhanced control with Enable functionality. The active-high Enable pin can be driven low to drive the output of the MCP14A0301/2 low, regardless of the status of the Input pin. An integrated pull-up resistor allows the user to leave the Enable pin floating for standard operation.

Additionally, the MCP14A0301/2 devices feature separate ground pins (AGND and GND), allowing greater noise isolation between the level-sensitive Input/Enable pins and the fast, high-current transitions of the push-pull output stage.

These devices are highly latch-up resistant under any condition within their power and voltage ratings. They can accept up to 500 mA of reverse current being forced back into their outputs without damage or logic upset. All terminals are fully protected against electrostatic discharge (ESD) up to 1.75 kV (HBM) and 200 V (MM).



  • High Peak Output Current: 3 A (typical)
  • Voltage supply range 4.5 V to 18 V
  • Low Shot-Through/Cross-Conduction Current in Output Stage
  • 1800 pF in 13 ns (typical)
  • Short Delay Times: tD1D2
  • Low Supply Current: 360 µA (typical)
  • Low-Voltage Threshold Input and Enable with Hysteresis
  • Latch-Up Protected: Withstands 500 mA Reverse Current
  • 8-Lead MSOP
  • 8-Lead SOIC
  • 8-Lead 2 x 2 WDFN
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