Microchip MCP14A0152T-E/MAY
Manufacturer No:
MCP14A0152T-E/MAY
Manufacturer:
Microchip
Package:
6-VDFN Exposed Pad
Description:
1.5 A MOSFET Gate Driver
Quantity:
In Stock :7237
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Expected Shipping：Sat, Jun 13 - Sun, Jun 14, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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MCP14A0152T-E/MAY Information
Microchip MCP14A0152T-E/MAY technical specifications, attributes, parameters and parts with similar specifications to Microchip MCP14A0152T-E/MAY.
- Type
- Parameter
- MOSFET Driver Type
- Low Side
- Configuration
- Non-Inverting
- Maximum Supply Voltage (V)
- 18
- Peak Source Output (A)
- 1.5
- Peak Sink Output (A)
- 1.5
- Source Resistance (Ω)
- 4.5
- Sink Resistance (Ω)
- 3
- Propagation Delay t<sub>D1</sub> (ns)
- 32
- Propagation Delay t<sub>D2</sub> (ns)
- 24
- Rise Time (t<sub>R</sub>, ns)
- 11
- Type
- Parameter
- Fall Time (t<sub>F</sub>, ns)
- 10
- Capacitive Load Drive
- 1,000 pF in 11.5 ns
Download datasheets and manufacturer documentation for Microchip MCP14A0152T-E/MAY.
Data Sheets:
Application Notes:
The MCP14A0151/2 devices are high-speed MOSFET gate drivers that are capable of providing up to 1.5 A of peak current while operating from a single 4.5 V to 18 V supply. The inverting (MCP14A0151) or non-inverting (MCP14A0152) single channel output is directly controlled from either TTL or CMOS (2 V to 18 V) logic. Feature low shoot-through current, matched rise and fall times, and short propagation delays which make them ideal for high switching frequency applications.
The MCP14A0151/2 family of MOSFET gate drivers offer enhanced control with Enable functionality. The active-high Enable pin can be driven low to drive the output of the MCP14A0151/2 low, regardless of the status of the Input pin. An integrated pull-up resistor allows the user to leave the Enable pin floating for standard operation.
Additionally, the MCP14A0151/2 MOSFET gate drivers feature separate ground pins (AGND and GND), allowing greater noise isolation between the level-sensitive Input/Enable pins and the fast, high-current transitions of the push-pull output stage.
These devices are highly latch-up resistant under any condition within their power and voltage ratings. They can accept up to 500 mA of reverse current being forced back into their outputs without damage or logic upset. All terminals are fully protected against electrostatic discharge (ESD) up to 1.75 kV (HBM) and 200 V (MM).
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12.28 M
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