ONSEMI MBT3946DW1T2G
Manufacturer No:
MBT3946DW1T2G
Manufacturer:
Package:
6-TSSOP, SC-88, SOT-363
Description:
NPN PNP Bipolar Transistor
Quantity:
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
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2. For in-stock parts, orders normally could be shipped out within 1-2days.
MBT3946DW1T2G Information
ONSEMI MBT3946DW1T2G technical specifications, attributes, parameters and parts with similar specifications to ONSEMI MBT3946DW1T2G.
- Type
- Parameter
- Container Qty.
- 3000
- VBE(sat) (V)
- 0.65
- Package Type
- SC-88-6 / SC-70-6 / SOT-363-6
- Case Outline
- 419B-02
- MSL Type
- 1
- Polarity
- Complementary
- hFE Max
- 300
- PTM Max (W)
- 0.15
- Container Type
- REEL
- Type
- General Purpose
- Type
- Parameter
- VCE(sat) Max (V)
- 0.3-NPN 0.4-PNP
- VCBO (V)
- 60
- hFE Min
- 100
- MSL Temp (°C)
- 260
- IC Cont. (A)
- 0.2
- VCEO Min (V)
- 40
- VEBO (V)
- 6
- VBE(on) (V)
- -
- fT Min (MHz)
- 250
Download datasheets and manufacturer documentation for ONSEMI MBT3946DW1T2G.
Datasheet:
Package Drawing:
The NPN PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.
Feature
- hFE, 100-300
- Low VCE(sat), ≤ 0.4 V
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
- Device Marking: MBT3946DW1T1 = 46
- Pb-Free Packages are Available
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MBT3946DW1T2G Relevant information
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