GeneSiC Semiconductor MBR40035CT

Manufacturer No:

MBR40035CT

Manufacturer:

GeneSiC Semiconductor

Package:

Twin Tower

Description:

Schottky Rectifier Diode 1 Pair Common Cathode Fast Recovery =< 500ns, > 200mA (Io) -55°C~150°C 400A 35V-DC 2-Element Twin Tower Chassis Mount

Quantity:

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MBR40035CT information

GeneSiC Semiconductor MBR40035CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MBR40035CT.

Type
Parameter

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)

Factory Lead Time
6 Weeks

Mount
Chassis Mount

Mounting Type
Chassis Mount

Package / Case
Twin Tower

Number of Pins
2

Diode Element Material
SILICON

Packaging
Bulk

Published
2010

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Max Operating Temperature
175°C

Min Operating Temperature
-40°C

HTS Code
8541.10.00.80

Terminal Position
UPPER

Terminal Form
UNSPECIFIED

Peak Reflow Temperature (Cel)
NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED

Number of Elements
2

Element Configuration
Common Cathode

Speed
Fast Recovery =< 500ns, > 200mA (Io)

Current - Reverse Leakage @ Vr
1mA @ 35V

Voltage - Forward (Vf) (Max) @ If
700mV @ 200A

Forward Current
200A

Max Reverse Leakage Current
1?A

Operating Temperature - Junction
-55°C~150°C

Max Surge Current
3kA

Application
POWER

Current - Average Rectified (Io)
400A DC

Forward Voltage
650mV

Max Reverse Voltage (DC)
35V

Average Rectified Current
400A

Number of Phases
1

Peak Reverse Current
1A

Max Repetitive Reverse Voltage (Vrrm)
35V

Diode Configuration
1 Pair Common Cathode

Max Forward Surge Current (Ifsm)
3kA

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for GeneSiC Semiconductor MBR40035CT.

MBR40035CT Overview

In the case of 650mV forward voltage, the device will operate.Array is important to monArrayor the surge current and make sure that Array does not exceed 3kA.In the case of 200A forward voltage, the device will operate.Powered by reverse voltage, this device has a peak voltage of 1A.This semiconductor device's maximal reverse leakage current is 1?A kA, which is its reverse leakage current when reverse biased.

MBR40035CT Features

650mV forward voltage
a peak voltage of 1A
a reverse voltage peak of 1A

MBR40035CT Applications

There are a lot of GeneSiC Semiconductor
MBR40035CT applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

User Guide

PURCHASE

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MEANS OF PAYMENT

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IMPORTANT NOTICE

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Step2：Desiccant Protection

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Step4：Individual Package

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Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.