STMicroelectronics MASTERGAN3TR
Manufacturer No:
MASTERGAN3TR
Manufacturer:
STMicroelectronics
Package:
Description:
High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
Quantity:
In Stock :2801
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Shipped from：HK Warehouse
Expected Shipping：Fri, May 29 - Sat, May 30, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
MASTERGAN3TR Information
STMicroelectronics MASTERGAN3TR technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics MASTERGAN3TR.
- Type
- Parameter
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tape And Reel
- RoHS Status
- Grade
- Industrial
- Package Name
- VFQFPN 9X9X1.0 31L PITCH 0.6MM
- ECCN US
- EAR99
- ECCN EU
- NEC
- Packing Type
- Tape And Reel
- RoHS Status
- Type
- Parameter
- Grade
- Industrial
- Package Name
- VFQFPN 9X9X1.0 31L PITCH 0.6MM
Download datasheets and manufacturer documentation for STMicroelectronics MASTERGAN3TR.
Data sheet:
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.
The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 mΩ and 450 mΩ for Low side and High side respectively, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
The MASTERGAN3 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors.
The MASTERGAN3 operates in the industrial temperature range, -40°C to 125°C.
The device is available in a compact 9x9 mm QFN package.
- 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
- QFN 9 x 9 x 1 mm package
- RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)
- IDS(MAX) = 6.5 A (LS) + 4 A (HS)
- Reverse current capability
- Zero reverse recovery loss
- UVLO protection on low-side and high-side
- Internal bootstrap diode
- Interlocking function
- Dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3 V to 15 V compatible inputs with hysteresis and pull-down
- Overtemperature protection
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design.
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
