M24512E-FDW6T1-STMicroelectronics-Price, Stock & Datasheet

The M24512E-F is a 512-Kbit I²C-compatible EEPROM (electrically erasable programmable memory) organized as 64 K x 8 bits. It can operate with a supply voltage from 1.6 V to 5.5 V with a clock frequency up to 1 MHz, over an ambient temperature range of -40 °C / +85 °C.

The device offers three 8-bit registers, namely: the device type identifier (DTI) register, the configurable device address (CDA) register, and the software write protection (SWP) register.

The device offers an additional 128-byte page, called the identification page. This page can be used to store sensitive application parameters which can be (later) permanently locked in read-only mode.

The M24512E-F is available in the standard 8-pin TSSOP8, SO8N, UFDFPN8, and unsawn wafer.

On demand, the EEPROM can be delivered with a preprogrammed and locked device address.

Key features

I²C interface
- Compatible with the following I²C bus modes:
  - 1 MHz (Fast-mode Plus)
  - 400 kHz (Fast-mode)
  - 100 kHz (Standard-mode)
Memory
- 512-Kbit (64-Kbyte) of EEPROM
- Page size: 128-byte
- Additional 128-byte identification page
Supply voltage
- Wide voltage range: 1.6 V to 5.5 V
Temperature
- Operating temperature range: -40 °C to +85 °C
Fast write cycle time
- Byte and page write within 4 ms (typically 3.1 ms)
Performance
- Enhanced ESD/latch-up protection
- More than 4 million write cycles
- More than 200-year data retention
- Fast wake-up time (less than 5 μs)
Ultralow power current consumption
- 330 nA (typical) in Standby mode
- 100 μA (typical) for read current
- 360 μA (typical) for write current
Advanced features
- Configurable device address register
- Device type identifier register (in read-only)
- Preprogrammed device address
- Software write protection register
- Hardware write protection of the whole memory array
- Random and sequential read modes
Package
- SO8N, TSSOP8, and UFDFPN8 (ECOPACK2)
- Unsawn wafer (each die is tested)