Texas Instruments LMG2656RFBR
Manufacturer No:
LMG2656RFBR
Manufacturer:
Texas Instruments
Package:
Description:
650V, 230mΩ GaN half-bridge with integrated driver, protection and current sense
Quantity:
In Stock :2020
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Date Code：Within 2 Years
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LMG2656RFBR Information
Texas Instruments LMG2656RFBR technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments LMG2656RFBR.
- Type
- Parameter
- VDS (max) (V)
- 650
- RDS(on) (mΩ)
- 230
- ID (max) (A)
- 3.6
- Features
- Bottom-side cooled, Built-in bootstrap diode, Cycle-by-cycle overcurrent protection, Half-bridge, Integrated current sense, Overtemperature protection
- Rating
- Catalog
- Operating temperature range (°C)
- -40 to 125
- Package
- VQFN (RFB)
- Pins
- 19
- Size
- 48 mm² 8 x 6
- REACH Status
- Yes
- Type
- Parameter
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Texas Instruments LMG2656RFBR.
Data sheet:
EVM User's guide:
The LMG2656 is a 650V 230mΩ GaN power-FET half bridge. The LMG2656 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap FET, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control. The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to PCB power ground.
The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.
The LMG2656 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down. Ultra low slew rate setting supports motor drive applications.
- 650V GaN power-FET half bridge
- 230mΩ low-side and high-side GaN FETs
- Integrated gate drivers with <100ns low propagation delays
- Programmable turn-on slew rate control
- Current-sense emulation with high-bandwidth and high accuracy
- Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
- Low-side (INL) / high-side (INH) gate-drive interlock
- High-side (INH) gate-drive signal level shifter
- Smart-switched bootstrap diode function
- High-side start up: <8µs
- Low-side / high-side cycle-by-cycle overcurrent protection
- Overtemperature protection
- AUX idle quiescent current: 250µA
- AUX standby quiescent current: 50µA
- BST idle quiescent current: 70µA
- 8mm × 6mm QFN package with dual thermal pads
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