LMG2652RFBR-Texas Instruments-Price, Stock & Datasheet

The LMG2652 is a 650V 140mΩ GaN power-FET half bridge. The LMG2652 simplifies design, reduces component count, and reduces board space by integrating half-bridge power FETs, gate drivers, bootstrap diode, and high-side gate-drive level shifter in a 6mm by 8mm QFN package.

The low-side current-sense emulation reduces power dissipation compared to the traditional current-sense resistor and allows the low-side thermal pad to be connected to the cooling PCB power ground.

The high-side GaN power FET can be controlled with either the low-side referenced gate-drive pin (INH) or the high-side referenced gate-drive pin (GDH). The high-side gate-drive signal level shifter reliably transmits the INH pin signal to the high-side gate driver in challenging power switching environments. The smart-switched GaN bootstrap FET has no diode forward-voltage drop, avoids overcharging the high-side supply, and has zero reverse-recovery charge.

The LMG2652 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include FET turn-on interlock, under-voltage lockout (UVLO), cycle-by-cycle current limit, and over-temperature shut down.

650V GaN power-FET half bridge
140mΩ low-side and high-side GaN FETs
Integrated gate drivers with <100ns low propagation delays
Current-sense emulation with high-bandwidth and high accuracy
Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
Low-side (INL) / high-side (INH) gate-drive interlock
High-side (INH) gate-drive signal level shifter
Smart-switched bootstrap diode function
High-side start up: <8µs
Low-side / high-side cycle-by-cycle overcurrent protection
Overtemperature protection
AUX idle quiescent current: 250µA
AUX standby quiescent current: 50µA
BST idle quiescent current: 70µA
8mm × 6mm QFN package with dual thermal pads