ONSEMI LE25S20XATAG
Manufacturer No:
LE25S20XATAG
Manufacturer:
Package:
8-XFBGA, WLCSP
Description:
Serial Flash Memory, 2 Mb (256K x 8)
Quantity:
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LE25S20XATAG Information
ONSEMI LE25S20XATAG technical specifications, attributes, parameters and parts with similar specifications to ONSEMI LE25S20XATAG.
- Type
- Parameter
- Package Type
- WLCSP-8
- VCC Min (V)
- 1.65
- I(standby) Max (µA)
- 10
- MSL Type
- 1
- Container Type
- REEL
- Container Qty.
- 5000
- T Max (°C)
- 85
- Case Outline
- 567NN
- MSL Temp (°C)
- 260
- Density
- 2 Mb
- Type
- Parameter
- Organization
- 256k x 8
- VCC Max (V)
- 1.95
- tACC Max (ns)
- 11
- Iact Max (mA)
- 6
- T Min (°C)
- -40
Download datasheets and manufacturer documentation for ONSEMI LE25S20XATAG.
Datasheet:
Package Drawing:
The LE25S20XA is a SPI bus flash memory device with a 2M bit (256K x 8-bit) configuration. It uses a single 1.8V power supply. While making the most of the features inherent to a serial flash memory device, the LE25S20XA is housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in applications more compact dimensions. The LE25S20XA also has a small sector erase capability which makes the device ideal for storing parameters or data that have fewer rewrite cycles and conventional EEPROMs cannot handle dueto insufficient capacity.
Application
- Serial Flash Memory Devices
End Product
- Smart Phones
- Wearable Devices
Feature
- Operations power supply : 1.65 to 1.95 V supply voltage range
- Operating frequency : 40 MHz (max)
- Temperature range : –40 to +85°C
- Serial interface : SPI mode 0, mode 3 supported
- Electronic Identification : JDEC ID, Device ID
- Sector size : 4K bytes/small sector, 64K bytes/sector
- Erase functions
: Small Sector Erase (SSE), Sector Erase (SE), Chip Erase (CHE) - Page program function : 256 bytes/page
- Status functions : Ready/Busy information, protect information
- Low operation current
: 6.0 mA (Read mode operation current, 40 MHz)
: 15 mA (Erase or Program mode operating current)
: 10 µA (CMOS standby current) - Erase time
: 40 ms (SSE, typ), 80 ms (SE, typ), 300 ms (CHE, typ) - Page program time (tPP)
: 3.0 ms/256 bytes (typ.), 3.5 ms/256 bytes (max.) - High reliability
: 100,000 erase/program cycles
: 20 years data retention period
LE25S20XATAG Relevant information
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