STMicroelectronics L99MH98-TR

L99MH98 is an integrated octal half-bridge pre-driver dedicated to control up to sixteen N-channel MOSFETs.

It is intended for DC motor control applications such as automotive power seat control or other applications.

A 24-bit serial peripheral interface (SPI) is used for configuring and controlling the eight half-bridges or four H‑bridge. SPI status registers provide high-level diagnostic information such as supply voltage monitoring, the charge pump voltage monitoring, temperature warning and overtemperature shutdown.

Each gate driver monitors independently its external MOSFET drain-source voltage for fault conditions.

The L99MH98 supports indirect current measurement on external MOSFETs, allowing cost saving and lower system complexity, avoiding the usage of shunt resistors.

A more efficient gate current control of the external MOSFETs, called “three stages gate current”, decreases and optimizes electromagnetic interference (EMI).

Protection features (drain-source monitoring for short circuit detection, overtemperature warning and shutdown, timeout watchdog for MCU control, detailed off-state diagnostic via SPI) ensure the ASIL-B achievement according to ISO 26262 standard.

The L99MH98 is hosted in a VFQFPN48L package with exposed pad. This package has wettable flanks for easy visual inspection of the solder joint.

• AEC-Q100 qualified
• ISO26262 compliant, covering ASIL-B safety integrity level
• Octal half-bridge, or quad H-bridge, pre-driver
• Independent channel driver up to 8 high-side or 8 low-side
• Driving logic permits any H-bridge configuration, pairing different half-bridges, using the internal gate drivers (GHx/SHx/GLx can be associated to any GHy/SHy/GLy)
• Support logic level and standard level MOSFETs
• Control of reverse battery protection MOSFET
• Fully configurable half-bridge driver in case of fault occurrence
• Generator mode for power trunk/tailgate applications
• Supporting indirect current measurement of external MOSFETs
• SPI configurable overvoltage threshold
• Adaptive MOSFET gate control
  • Three steps gate control of external HS/LS
  • Improved electromagnetic emission
  • Programmable gate current up to 120 mA
  • Reduced switching losses in PWM mode
• V_ds monitoring
• Low IQ (1.05 μA) in reset mode
• High-side and low-side capable of protection and diagnosis
• Four external diodes control, needed for assisting calibration of indirect current measurement, can be used for steady - temperature monitoring
• Drain-source monitoring for short circuit detection
• Overtemperature warning and shutdown
• Timeout watchdog for MCU control
• Detailed off-state diagnostic (open load, short circuit to battery or short circuit to GND) via SPI
• Three PWM inputs
  • High-side and low-side PWM capable
  • Active freewheeling
  • Up to 50 kHz PWM frequency
• Out-of-frame serial peripheral interface (SPI), 24 bits
• QFN package with wettable flanks
• Green product (RoHS compliant)