ONSEMI KSE45H8
Manufacturer No:
KSE45H8
Manufacturer:
Package:
TO-220-3
Description:
PNP 150°C TJ 10?A 1 Elements 3 Terminations SILICON PNP TO-220-3 Bulk Through Hole
Quantity:
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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KSE45H8 Information
ONSEMI KSE45H8 technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSE45H8.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- JESD-609 Code
- e3
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Type
- Parameter
- ECCN Code
- EAR99
- Terminal Finish
- MATTE TIN
- HTS Code
- 8541.29.00.75
- Terminal Position
- SINGLE
- Peak Reflow Temperature (Cel)
- NOT APPLICABLE
- Reach Compliance Code
- compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT APPLICABLE
- Base Part Number
- KSE45H
- JESD-30 Code
- R-PSFM-T3
- Qualification Status
- Not Qualified
Download datasheets and manufacturer documentation for ONSEMI KSE45H8.
KSE45H8 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 60 @ 2A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Parts of this part have transition frequencies of 40MHz.This device displays a 60V maximum voltage - Collector Emitter Breakdown.
KSE45H8 Features
the DC current gain for this device is 60 @ 2A 1V
the vce saturation(Max) is 1V @ 400mA, 8A
a transition frequency of 40MHz
KSE45H8 Applications
There are a lot of ON Semiconductor
KSE45H8 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
KSE45H8 Relevant information
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