ONSEMI KSE13003AS
Manufacturer No:
KSE13003AS
Manufacturer:
Package:
TO-225AA, TO-126-3
Description:
NPN 150°C TJ TO-225AA, TO-126-3 Bulk Through Hole
Quantity:


In Stock :2783
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Step6:Packaging Box
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KSE13003AS Information
ONSEMI KSE13003AS technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSE13003AS.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-225AA, TO-126-3
- Supplier Device Package
- TO-126-3
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- KSE13003
- Power - Max
- 20W
- Transistor Type
- NPN
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 8 @ 500mA 2V
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 500mA, 1.5A
- Voltage - Collector Emitter Breakdown (Max)
- 400V
- Current - Collector (Ic) (Max)
- 1.5A
- Frequency - Transition
- 4MHz
Download datasheets and manufacturer documentation for ONSEMI KSE13003AS.
KSE13003AS Overview
In this device, the DC current gain is 8 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 500mA, 1.5A.Supplier device package TO-126-3 comes with the product.The device exhibits a collector-emitter breakdown at 400V.
KSE13003AS Features
the DC current gain for this device is 8 @ 500mA 2V
the vce saturation(Max) is 3V @ 500mA, 1.5A
the supplier device package of TO-126-3
KSE13003AS Applications
There are a lot of ON Semiconductor
KSE13003AS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
KSE13003AS Relevant information
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