ONSEMI KSD363O
Manufacturer No:
KSD363O
Manufacturer:
ONSEMI
Package:
TO-220-3
Description:
NPN 150°C TJ 1mA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
Quantity:
In Stock :7984
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Shipped from：HK Warehouse
Expected Shipping：Fri, Jun 12 - Sat, Jun 13, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
Step3：Vacuum Packaging
Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
SHIPPING COST
1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
KSD363O Information
ONSEMI KSD363O technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSD363O.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Surface Mount
- NO
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Terminal Position
- SINGLE
- Type
- Parameter
- Reach Compliance Code
- compliant
- Base Part Number
- KSD363
- JESD-30 Code
- R-PSFM-T3
- Number of Elements
- 1
- Configuration
- SINGLE
- Power - Max
- 40W
- Transistor Application
- AMPLIFIER
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 1A 5V
Download datasheets and manufacturer documentation for ONSEMI KSD363O.
KSD363O Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 1A 5V.When VCE saturation is 1V @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).In the part, the transition frequency is 10MHz.The device has a 120V maximal voltage - Collector Emitter Breakdown.
KSD363O Features
the DC current gain for this device is 70 @ 1A 5V
the vce saturation(Max) is 1V @ 100mA, 1A
a transition frequency of 10MHz
KSD363O Applications
There are a lot of ON Semiconductor
KSD363O applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
