ONSEMI KSD1221OTU
Manufacturer No:
KSD1221OTU
Manufacturer:
Package:
TO-251-3 Short Leads, IPak, TO-251AA
Description:
NPN 150°C TJ 100?A ICBO TO-251-3 Short Leads, IPak, TO-251AA Tube Through Hole
Quantity:
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KSD1221OTU Information
ONSEMI KSD1221OTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSD1221OTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Supplier Device Package
- I-PAK
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Power - Max
- 1W
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 500mA 5V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 100?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 300mA, 3A
- Voltage - Collector Emitter Breakdown (Max)
- 60V
- Current - Collector (Ic) (Max)
- 3A
- Frequency - Transition
- 3MHz
Download datasheets and manufacturer documentation for ONSEMI KSD1221OTU.
Datasheets:
KSD1221OTU Overview
This device has a DC current gain of 60 @ 500mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of I-PAK.Detection of Collector Emitter Breakdown at 60V maximal voltage is present.
KSD1221OTU Features
the DC current gain for this device is 60 @ 500mA 5V
the vce saturation(Max) is 1V @ 300mA, 3A
the supplier device package of I-PAK
KSD1221OTU Applications
There are a lot of ON Semiconductor
KSD1221OTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
KSD1221OTU Relevant information
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