ONSEMI KSC5042FYDTU
Manufacturer No:
KSC5042FYDTU
Manufacturer:
Package:
TO-220-3 Full Pack, Formed Leads
Description:
NPN 150°C TJ 10?A ICBO TO-220-3 Full Pack, Formed Leads Tube Through Hole
Quantity:
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KSC5042FYDTU Information
ONSEMI KSC5042FYDTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSC5042FYDTU.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack, Formed Leads
- Supplier Device Package
- TO-220F-3 (Y-Forming)
- Operating Temperature
- 150°C TJ
- Packaging
- Tube
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Power - Max
- 6W
- Transistor Type
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 30 @ 10mA 5V
- Type
- Parameter
- Current - Collector Cutoff (Max)
- 10?A ICBO
- Vce Saturation (Max) @ Ib, Ic
- 5V @ 4mA, 20mA
- Voltage - Collector Emitter Breakdown (Max)
- 900V
- Current - Collector (Ic) (Max)
- 100mA
Download datasheets and manufacturer documentation for ONSEMI KSC5042FYDTU.
Datasheets:
PCN Obsolescence/ EOL:
KSC5042FYDTU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10mA 5V.When VCE saturation is 5V @ 4mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220F-3 (Y-Forming) contains the product.The device has a 900V maximal voltage - Collector Emitter Breakdown.
KSC5042FYDTU Features
the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 5V @ 4mA, 20mA
the supplier device package of TO-220F-3 (Y-Forming)
KSC5042FYDTU Applications
There are a lot of ON Semiconductor
KSC5042FYDTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
KSC5042FYDTU Relevant information
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