ONSEMI KSC5042FYDTU

Manufacturer No:

KSC5042FYDTU

Manufacturer:

ONSEMI

Package:

TO-220-3 Full Pack, Formed Leads

Description:

NPN 150°C TJ 10?A ICBO TO-220-3 Full Pack, Formed Leads Tube Through Hole

Quantity:

Delivery:

Payment:

In Stock :Available

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KSC5042FYDTU information

ONSEMI KSC5042FYDTU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSC5042FYDTU.

Type
Parameter

Mounting Type
Through Hole

Package / Case
TO-220-3 Full Pack, Formed Leads

Supplier Device Package
TO-220F-3 (Y-Forming)

Operating Temperature
150°C TJ

Packaging
Tube

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Power - Max
6W

Transistor Type
NPN

DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 10mA 5V

Current - Collector Cutoff (Max)
10?A ICBO

Vce Saturation (Max) @ Ib, Ic
5V @ 4mA, 20mA

Voltage - Collector Emitter Breakdown (Max)
900V

Current - Collector (Ic) (Max)
100mA

Download datasheets and manufacturer documentation for ONSEMI KSC5042FYDTU.

Datasheets:

onsemiconductor-ksc5042ftu-datasheets-9947.pdf

PCN Obsolescence/ EOL:

onsemiconductor-sa17a-pcnobsolescenceeol-5410.pdf

KSC5042FYDTU Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 10mA 5V.When VCE saturation is 5V @ 4mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-220F-3 (Y-Forming) contains the product.The device has a 900V maximal voltage - Collector Emitter Breakdown.

KSC5042FYDTU Features

the DC current gain for this device is 30 @ 10mA 5V
the vce saturation(Max) is 5V @ 4mA, 20mA
the supplier device package of TO-220F-3 (Y-Forming)

KSC5042FYDTU Applications

There are a lot of ON Semiconductor
KSC5042FYDTU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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