ONSEMI KSC1187YTA
Manufacturer No:
KSC1187YTA
Manufacturer:
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Quantity:
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KSC1187YTA Information
ONSEMI KSC1187YTA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSC1187YTA.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package
- TO-92-3
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Box (TB)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- KSC1187
- Power - Max
- 250mW
- Transistor Type
- NPN
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 2mA 10V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max)
- 20V
- Current - Collector (Ic) (Max)
- 30mA
- Frequency - Transition
- 700MHz
Download datasheets and manufacturer documentation for ONSEMI KSC1187YTA.
Datasheets:
KSC1187YTA Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 120 @ 2mA 10V.The product comes in the supplier device package of TO-92-3.A 20V maximal voltage - Collector Emitter Breakdown is present in the device.
KSC1187YTA Features
the DC current gain for this device is 120 @ 2mA 10V
the supplier device package of TO-92-3
KSC1187YTA Applications
There are a lot of ON Semiconductor
KSC1187YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
KSC1187YTA Relevant information
The following parts are popular search parts in Integrated Circuits (ICs).
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