ONSEMI KSC1009GTA
Manufacturer No:
KSC1009GTA
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Quantity:
In Stock :1926
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Shipped from：HK Warehouse
Expected Shipping：Thu, Jun 11 - Fri, Jun 12, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step1：Prepare product
Step2：Desiccant Protection
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Step4：Individual Package
Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
KSC1009GTA Information
ONSEMI KSC1009GTA technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSC1009GTA.
- Type
- Parameter
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package
- TO-92-3
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Box (TB)
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Base Part Number
- KSC1009
- Power - Max
- 800mW
- Transistor Type
- NPN
- Type
- Parameter
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 50mA 2V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 700mV @ 20mA, 200mA
- Voltage - Collector Emitter Breakdown (Max)
- 140V
- Current - Collector (Ic) (Max)
- 700mA
- Frequency - Transition
- 50MHz
Download datasheets and manufacturer documentation for ONSEMI KSC1009GTA.
Datasheets:
KSC1009GTA Overview
In this device, the DC current gain is 200 @ 50mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 20mA, 200mA.Supplier device package TO-92-3 comes with the product.The device exhibits a collector-emitter breakdown at 140V.
KSC1009GTA Features
the DC current gain for this device is 200 @ 50mA 2V
the vce saturation(Max) is 700mV @ 20mA, 200mA
the supplier device package of TO-92-3
KSC1009GTA Applications
There are a lot of ON Semiconductor
KSC1009GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
