ONSEMI KSB1121STM

Manufacturer No:

KSB1121STM

Manufacturer:

ONSEMI

Package:

TO-243AA

Description:

PNP 150°C TJ 100nA ICBO TO-243AA Tape & Reel (TR) Surface Mount

Quantity:

Delivery:

Payment:

In Stock :Available

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KSB1121STM information

ONSEMI KSB1121STM technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSB1121STM.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-243AA

Supplier Device Package
SOT-89-3

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Power - Max
1.3W

Transistor Type
PNP

DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
600mV @ 75mA, 1.5A

Voltage - Collector Emitter Breakdown (Max)
25V

Current - Collector (Ic) (Max)
2A

Frequency - Transition
150MHz

Download datasheets and manufacturer documentation for ONSEMI KSB1121STM.

Datasheets:

onsemiconductor-ksb1121stm-datasheets-9304.pdf

KSB1121STM Overview

In this device, the DC current gain is 140 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 75mA, 1.5A.Supplier device package SOT-89-3 comes with the product.The device exhibits a collector-emitter breakdown at 25V.

KSB1121STM Features

the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 600mV @ 75mA, 1.5A
the supplier device package of SOT-89-3

KSB1121STM Applications

There are a lot of ON Semiconductor
KSB1121STM applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.