ONSEMI KSB1116GBU
Manufacturer No:
KSB1116GBU
Manufacturer:
ONSEMI
Package:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description:
PNP 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Bulk Through Hole
Quantity:
In Stock :5281
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Shipping & Availability
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Shipped from：HK Warehouse
Expected Shipping：Thu, May 28 - Fri, May 29, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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Step2：Desiccant Protection
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Step5：Anti-collision Filling
Step6：Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
KSB1116GBU Information
ONSEMI KSB1116GBU technical specifications, attributes, parameters and parts with similar specifications to ONSEMI KSB1116GBU.
- Type
- Parameter
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins
- 3
- Operating Temperature
- 150°C TJ
- Packaging
- Bulk
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Rated DC
- -50V
- Max Power Dissipation
- 750mW
- Type
- Parameter
- Current Rating
- -1A
- Frequency
- 120MHz
- Base Part Number
- KSB1116
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 750mW
- Gain Bandwidth Product
- 120MHz
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 50V
- Max Collector Current
- 1A
Download datasheets and manufacturer documentation for ONSEMI KSB1116GBU.
Datasheets:
ReachStatement:
KSB1116GBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 100mA 2V DC current gain.As it features a collector emitter saturation voltage of -200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 1A volts.
KSB1116GBU Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at -6V
the current rating of this device is -1A
KSB1116GBU Applications
There are a lot of ON Semiconductor
KSB1116GBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
