Microchip JANTXV2N6802

Manufacturer No:

JANTXV2N6802

Manufacturer:

Microchip

Package:

TO-205AF Metal Can

Description:

MOSFET (Metal Oxide) N-Channel Bulk 1.6 ? @ 2.5A, 10V ±20V 33nC @ 10V 500V TO-205AF Metal Can

Quantity:

In Stock :8647

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Shipping & Availability

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 24 - Mon, May 25, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

1. Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).
2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

JANTXV2N6802 Information

Microchip JANTXV2N6802 technical specifications, attributes, parameters and parts with similar specifications to Microchip JANTXV2N6802.

Type
Parameter

Factory Lead Time
30 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-205AF Metal Can

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Bulk

Series
Military, MIL-PRF-19500/557

Published
1997

Type
Parameter

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Terminal Finish
Tin/Lead (Sn/Pb)

Additional Feature
HIGH RELIABILITY

HTS Code
8541.21.00.95

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Download datasheets and manufacturer documentation for Microchip JANTXV2N6802.

JANTXV2N6802 Overview

This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 11A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).