JANTXV2N6800U-Microchip-Price, Stock & Datasheet

JANTXV2N6800U Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 0.51 mJ.This device has a continuous drain current (ID) of [3A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 3A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 35 ns.A maximum pulsed drain current of 12A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 400V.In order to operate this transistor, a voltage of 400V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

JANTXV2N6800U Features

the avalanche energy rating (Eas) is 0.51 mJ
a continuous drain current (ID) of 3A
the turn-off delay time is 35 ns
based on its rated peak drain current 12A.
a 400V drain to source voltage (Vdss)