Microchip JANTXV2N6796U
Manufacturer No:
JANTXV2N6796U
Manufacturer:
Microchip
Package:
18-CLCC
Description:
MOSFET (Metal Oxide) N-Channel Bulk 195m ? @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC
Quantity:
In Stock :9299
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Shipped from：HK Warehouse
Expected Shipping：Sat, Jun 6 - Sun, Jun 7, 2026
Lead Time：Inquire about availability
Date Code：Within 2 Years
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
JANTXV2N6796U Information
Microchip JANTXV2N6796U technical specifications, attributes, parameters and parts with similar specifications to Microchip JANTXV2N6796U.
- Type
- Parameter
- Contact Plating
- Lead, Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 18-CLCC
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Bulk
- Series
- Military, MIL-PRF-19500/557
- Published
- 1997
- JESD-609 Code
- e0
- Type
- Parameter
- Pbfree Code
- no
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 15
- ECCN Code
- EAR99
- Terminal Finish
- Tin/Lead (Sn/Pb)
- Additional Feature
- HIGH RELIABILITY
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- QUAD
- Terminal Form
- NO LEAD
Download datasheets and manufacturer documentation for Microchip JANTXV2N6796U.
JANTXV2N6796U Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 134 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 8A continuous drain current (ID).Drain current refers to the maximum continuous current a device can conduct, and it is 8A.Peak drain current is 32A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 100V.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
JANTXV2N6796U Features
the avalanche energy rating (Eas) is 134 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)
JANTXV2N6796U Applications
There are a lot of Microsemi Corporation
JANTXV2N6796U applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
AIChipLink – Your Trusted Electronic Components Distributor
12.28 M
Listed Part Number
3,000+
Leading Manufacturers
4.9 M
In-stock SKU
15,000+
Warehouse Area(㎡)
