Microchip JANTXV2N3999P

Manufacturer No:

JANTXV2N3999P

Manufacturer:

Microchip

Package:

TO-210AA, TO-59-4, Stud

Description:

NPN -65°C ~ 200°C (TJ) 10?A TO-210AA, TO-59-4, Stud Stud Mount

Quantity:

In Stock :6492

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Shipped from：HK Warehouse

Expected Shipping：Tue, Jun 9 - Wed, Jun 10, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

JANTXV2N3999P Information

Microchip JANTXV2N3999P technical specifications, attributes, parameters and parts with similar specifications to Microchip JANTXV2N3999P.

Type
Parameter

Mounting Type
Stud Mount

Package / Case
TO-210AA, TO-59-4, Stud

Supplier Device Package
TO-59

Mfr
Microchip Technology

Package
Bulk

Product Status
Active

Series
Military, MIL-PRF-19500/374

Operating Temperature
-65°C ~ 200°C (TJ)

Power - Max
2 W

Transistor Type
NPN

Type
Parameter

DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A, 2V

Current - Collector Cutoff (Max)
10?A

Vce Saturation (Max) @ Ib, Ic
2V @ 500mA, 5A

Voltage - Collector Emitter Breakdown (Max)
80 V

Current - Collector (Ic) (Max)
10 A

Download datasheets and manufacturer documentation for Microchip JANTXV2N3999P.

JANTXV2N3999P Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 1A, 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 500mA, 5A.This product comes in a TO-59 device package from the supplier.Device displays Collector Emitter Breakdown (80 V maximal voltage).