Microchip JANTX2N7227U
Microchip JANTX2N7227U

Microchip JANTX2N7227U

Manufacturer No:

JANTX2N7227U

Manufacturer:

Microchip

Package:

TO-267AB

Description:

MOSFET (Metal Oxide) N-Channel Bulk 415m ? @ 14A, 10V ±20V 110nC @ 10V 400V TO-267AB

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In Stock :4049

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Expected Shipping:Thu, May 21 - Fri, May 22, 2026
Date Code:Within 2 Years

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

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Step4:Individual Package

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Step5:Anti-collision Filling

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Step6:Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

JANTX2N7227U Information

Microchip JANTX2N7227U technical specifications, attributes, parameters and parts with similar specifications to Microchip JANTX2N7227U.

  • Type
  • Parameter
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-267AB
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • -55°C~150°C TJ
  • Packaging
  • Bulk
  • Series
  • Military, MIL-PRF-19500/592
  • Published
  • 1997
  • JESD-609 Code
  • e0
  • Type
  • Parameter
  • Pbfree Code
  • no
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • Terminal Finish
  • Tin/Lead (Sn/Pb)
  • Additional Feature
  • HIGH RELIABILITY
  • HTS Code
  • 8541.29.00.95
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • BOTTOM
  • Terminal Form
  • NO LEAD

Download datasheets and manufacturer documentation for Microchip JANTX2N7227U.

JANTX2N7227U Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 56A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 400V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

JANTX2N7227U Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)


JANTX2N7227U Applications


There are a lot of Microsemi Corporation
JANTX2N7227U applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching