Microchip JANTX2N6796U
Manufacturer No:
JANTX2N6796U
Manufacturer:
Package:
CERAMIC, LCC-16
Description:
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-16
Quantity:


In Stock :1028
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JANTX2N6796U Information
Microchip JANTX2N6796U technical specifications, attributes, parameters and parts with similar specifications to Microchip JANTX2N6796U.
- Type
- Parameter
- Pbfree Code
- No
- RoHS Status
- Non-RoHS Compliant
- Part Life Cycle Code
- Obsolete
- Ihs Manufacturer
- MICROSEMI CORP
- Part Package Code
- LCC
- Package Description
- CERAMIC, LCC-16
- Pin Count
- 16
- Reach Compliance Code
- unknown
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Microsemi Corporation
- Type
- Parameter
- Additional Feature
- HIGH RELIABILITY
- Avalanche Energy Rating (Eas)
- 134 mJ
- Case Connection
- SOURCE
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 100 V
- Drain Current-Max (ID)
- 8 A
- Drain-source On Resistance-Max
- 0.195 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-CQCC-N15
- JESD-609 Code
- e0
Download datasheets and manufacturer documentation for Microchip JANTX2N6796U.
JANTX2N6796U Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 134 mJ.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 8A.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
JANTX2N6796U Features
the avalanche energy rating (Eas) is 134 mJ
a continuous drain current (ID) of 8A
based on its rated peak drain current 32A.
a 100V drain to source voltage (Vdss)
JANTX2N6796U Applications
There are a lot of Microsemi Corporation
JANTX2N6796U applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
JANTX2N6796U Relevant information
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