

Microchip JANTX2N5012S
Manufacturer No:
JANTX2N5012S
Manufacturer:
Package:
TO-205AD, TO-39-3 Metal Can
Description:
NPN -65°C~200°C TJ 10nA ICBO 1 Elements TO-205AD, TO-39-3 Metal Can Bulk Through Hole
Quantity:


In Stock :2477
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JANTX2N5012S Information
Microchip JANTX2N5012S technical specifications, attributes, parameters and parts with similar specifications to Microchip JANTX2N5012S.
- Type
- Parameter
- Lifecycle Status
- OBSOLETE (Last Updated: 3 weeks ago)
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Number of Pins
- 3
- Supplier Device Package
- TO-39 (TO-205AD)
- Operating Temperature
- -65°C~200°C TJ
- Packaging
- Bulk
- Series
- Military, MIL-PRF-19500/727
- Published
- 2007
- Type
- Parameter
- Part Status
- Obsolete
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Max Operating Temperature
- 200°C
- Min Operating Temperature
- -65°C
- Max Power Dissipation
- 1W
- Number of Elements
- 1
- Polarity
- NPN
- Power Dissipation
- 1W
- Power - Max
- 1W
- Transistor Type
- NPN
Download datasheets and manufacturer documentation for Microchip JANTX2N5012S.
JANTX2N5012S Overview
This device has a DC current gain of 30 @ 25mA 10V, which is the ratio between the collector current and the base current.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor comes in a supplier device package of TO-39 (TO-205AD).Detection of Collector Emitter Breakdown at 700V maximal voltage is present.The maximum collector current is 200mA volts.
JANTX2N5012S Features
the DC current gain for this device is 30 @ 25mA 10V
the emitter base voltage is kept at 5V
the supplier device package of TO-39 (TO-205AD)
JANTX2N5012S Applications
There are a lot of Microsemi Corporation
JANTX2N5012S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
JANTX2N5012S Relevant information
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