Microchip JANSR2N7381

Manufacturer No:

JANSR2N7381

Manufacturer:

Microchip

Package:

TO-257-3

Description:

MOSFET (Metal Oxide) N-Channel Tray 490mOhm @ 9.4A, 12V ±20V 50nC @ 12V 200V TO-257-3

Quantity:

In Stock :6604

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Expected Shipping：Fri, Jun 5 - Sat, Jun 6, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

JANSR2N7381 Information

Microchip JANSR2N7381 technical specifications, attributes, parameters and parts with similar specifications to Microchip JANSR2N7381.

Type
Parameter

Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)

Mounting Type
Through Hole

Package / Case
TO-257-3

Supplier Device Package
TO-257

Operating Temperature
-55°C~150°C TJ

Packaging
Tray

Series
Military, MIL-PRF-19500/614

Published
1997

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
Not Applicable

Type
Parameter

Technology
MOSFET (Metal Oxide)

Power Dissipation-Max
2W Ta 75W Tc

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
490mOhm @ 9.4A, 12V

Vgs(th) (Max) @ Id
4V @ 1mA

Current - Continuous Drain (Id) @ 25°C
9.4A Tc

Gate Charge (Qg) (Max) @ Vgs
50nC @ 12V

Drain to Source Voltage (Vdss)
200V

Drive Voltage (Max Rds On,Min Rds On)
12V

Vgs (Max)
±20V

Download datasheets and manufacturer documentation for Microchip JANSR2N7381.

JANSR2N7381 Overview

In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (12V).