Microchip JAN2N6768

Manufacturer No:

JAN2N6768

Manufacturer:

Microchip

Package:

TO-204AE

Description:

MOSFET (Metal Oxide) N-Channel Bulk 400m ? @ 14A, 10V ±20V 110nC @ 10V 400V TO-204AE

Quantity:

In Stock :3013

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Expected Shipping：Tue, May 12 - Wed, May 13, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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JAN2N6768 Information

Microchip JAN2N6768 technical specifications, attributes, parameters and parts with similar specifications to Microchip JAN2N6768.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-204AE

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Bulk

Series
Military, MIL-PRF-19500/543

Published
1997

JESD-609 Code
e0

Type
Parameter

Pbfree Code
no

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

Terminal Finish
Tin/Lead (Sn/Pb)

HTS Code
8541.29.00.95

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Terminal Form
PIN/PEG

Pin Count
2

Download datasheets and manufacturer documentation for Microchip JAN2N6768.

Datasheets:

microsemicorporation-jan2n6768-datasheets-1755.pdf

JAN2N6768 Overview

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.Its continuous drain current is 14A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 170 ns.Its maximum pulsed drain current is 56A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 35 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 400V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

JAN2N6768 Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 170 ns
based on its rated peak drain current 56A.
a 400V drain to source voltage (Vdss)