Microchip JAN2N6766

Manufacturer No:

JAN2N6766

Manufacturer:

Microchip

Package:

TO-204AE

Description:

MOSFET (Metal Oxide) N-Channel Bulk 90m ? @ 30A, 10V ±20V 115nC @ 10V 200V TO-204AE

Quantity:

In Stock :7600

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Shipped from：HK Warehouse

Expected Shipping：Sun, May 17 - Mon, May 18, 2026

Lead Time：Inquire about availability

Date Code：Within 2 Years

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Step2：Desiccant Protection

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Step6：Packaging Box

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

JAN2N6766 Information

Microchip JAN2N6766 technical specifications, attributes, parameters and parts with similar specifications to Microchip JAN2N6766.

Type
Parameter

Contact Plating
Lead, Tin

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-204AE

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Bulk

Series
Military, MIL-PRF-19500/543

Published
1997

Type
Parameter

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier

HTS Code
8541.29.00.95

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Terminal Form
PIN/PEG

Download datasheets and manufacturer documentation for Microchip JAN2N6766.

Datasheets:

microsemicorporation-jan2n6768-datasheets-1755.pdf

JAN2N6766 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.A maximum pulsed drain current of 120A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 200V.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

JAN2N6766 Features

the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 120A.
a 200V drain to source voltage (Vdss)